首页>
外国专利>
REPLACEMENT METAL GATE PROCESS FOR VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR WITH SELF-ALIGNED SHARED CONTACTS
REPLACEMENT METAL GATE PROCESS FOR VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR WITH SELF-ALIGNED SHARED CONTACTS
展开▼
机译:具有自对准倾斜接触的垂直传输场效应晶体管的金属门置换工艺
展开▼
页面导航
摘要
著录项
相似文献
摘要
A semiconductor structure includes a substrate, a bottom source/drain region disposed on a top surface of the substrate, and a plurality of fins disposed over a top surface of the bottom source/drain region. The fins provide vertical transport channels for one or more vertical transport field-effect transistors. The semiconductor structure also includes at least one self-aligned shared contact disposed between an adjacent pair of the plurality of fins. The adjacent pair of the plurality of fins includes a first fin providing a first vertical transport channel for a first vertical transport field-effect transistor and a second fin providing a second vertical transport channel for a second vertical transport field-effect transistor.
展开▼