Self-aligned contact metallization for III–V channel Field-Effect Transistors

摘要

To achieve high drive current for III–V Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) in future technology nodes, potential performance bottlenecks such as high series resistance need to be addressed. In this paper, we review several self-aligned metallization technologies available for reducing the source/drain series resistance in planar and multiple-gate III–V MOSFETs. Novel approaches for forming self-aligned contacts in III–V MOSFETs in a manner similar to the salicidation process in Silicon Complementary Metal-Oxide-Semiconductor (CMOS) Technology will be discussed.