Ⅲ-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding

摘要

We demonstrated the integration of high-mobility channel InGaAs n-channel and Ge p-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs and pMOSFETs) with self-aligned Ni-InGaAs and Ni-Ge metal source/drain (S/D) on a Ge substrate by direct wafer bonding (DWB). Ni-based metal S/D and AI_2O_3-based gate stacks have realized the fabrication of high-electron-mobility InGaAs-on-insulator (InGaAs-Ol) nMOSFETs and high-hole-mobility Ge pMOSFETs at the same time. The InGaAs-OI nMOSFETs and Ge pMOSFETs exhibited high electron and hole mobilities of 1800 and 260 cm~2 V~(-1) s~(-1) and mobility enhancements against Si of 3.5x and 2.3x, respectively.