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NON-PLANAR INTEGRATED CIRCUIT STRUCTURES HAVING ASYMMETRIC SOURCE AND DRAIN TRENCH CONTACT SPACING
NON-PLANAR INTEGRATED CIRCUIT STRUCTURES HAVING ASYMMETRIC SOURCE AND DRAIN TRENCH CONTACT SPACING
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机译:具有非对称源和漏极沟槽接触间距的非平面集成电路结构
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摘要
Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication. In an example, an integrated circuit structure includes a fin including silicon. A gate structure is over the fin, the gate structure having a center. A conductive source trench contact is over the fin, the conductive source trench contact having a center spaced apart from the center of the gate structure by a first distance. A conductive drain trench contact is over the fin, the conductive drain trench contact having a center spaced apart from the center of the gate structure by a second distance, the second distance greater than the first distance by a factor of three.
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