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WAFER BACKSIDE CLEANING APPARATUS AND METHOD OF CLEANING WAFER BACKSIDE

机译:晶片背面清洁装置和晶片背面清洁方法

摘要

A wafer cleaning and polishing pad includes a pad having a polishing surface, wherein the polishing surface includes a first material having a Shore D hardness ranging from 50 to 80 and a static coefficient of friction ranging from 0.01 to 0.6. The first material is a fluoropolymer. The pad includes a middle layer and/or a base under the polishing surface. The base includes a second material and the middle layer includes a third material having a lower surface hardness and a higher coefficient of friction than the first material. The polishing surface includes a plurality of grooves with varying groove depth from center of the pad to an edge of the pad.
机译:晶片清洁和抛光垫包括具有抛光表面的垫,其中抛光表面包括具有肖氏D硬度为50至80且静摩擦系数为0.01至0.6的第一材料。第一材料是含氟聚合物。垫包括在抛光表面下方的中间层和/或基底。基底包括第二材料,并且中间层包括第三材料,该第三材料具有比第一材料低的表面硬度和更高的摩擦系数。抛光表面包括多个凹槽,这些凹槽具有从垫的中心到垫的边缘变化的槽深度。

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