First demonstration of low-power monolithic transimpedance amplifier using InP/GaAsSb/InP DHBTs

摘要

[[abstract]]A low-power transimpedance amplifier is presented based on InP/GaAsSb/InP DHBT technology. This is the first monolithic circuit demonstration using Sb-based InP DHBTs. Self-biased from a single 2.55 V dc supply, the broadband transimpedance amplifier in shunt-shunt feedback exhibited a 6.0 dB gain, 8.0 GHz bandwidth, 43 dB/spl Omega/ transimpedance, and a corresponding gain-bandwidth of 1.13 THz-/spl Omega/ while consuming only 15.3 mW dc power. The single-stage buffer amplifier achieved a good gain-bandwidth-product per dc power figure-of-merit (GBP/P/sub dc/) of 1.05 GHz/mW.