首页> 外文OA文献 >Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing

【2h】

Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing

机译：通过氢和氦注入以及随后的退火在硅中引入辐射缺陷和热供体

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Pavel Hazdra; Volodymyr Komarnitskyy;
展开▼
作者单位

展开▼
年度 2015
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing [J] . Pavel Hazdra, Volodymyr Komarnitskyy Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2008,第0期

机译：氢和氦注入及随后的退火在硅中引入的辐射缺陷和热供体
2. Defects in silicon introduced by helium implantation and subsequent annealing [J] . I. Capan, J. Bak-Misiuk, B. Pivac Radiation Physics and Chemistry . 2011,第10期

机译：氦气注入和随后退火导致的硅缺陷
3. Localization of platinum concentration profile in silicon by helium implantation followed by subsequent thermal annealing [J] . Kazushige Matsuyama, Soushi Hasegawa, Hidetsugu Mukae 材料の科学と工学 . 2003,第3期

机译：氦气注入后硅浓度曲线的定位随后热退火
4. Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing [C] . Pavel Hazdra, Volodymyr Komarnitskyy International Autuman Meeting on Gettering and Defect Engineering in Semiconductor Technology . 2008

机译：通过氢气和氦气植入和随后的退火引入硅中引入的辐射缺陷和热量供体
5. Phosphorus-defect interactions during thermal annealing of ion implanted silicon. [D] . Keys, Patrick Henry. 2001

机译：离子注入硅的热退火过程中的磷缺陷相互作用。
6. Effect of Annealing on Microstructures and Hardening of Helium-Hydrogen-Implanted Sequentially Vanadium Alloys [O] . Shaoning Jiang, Zhiming Wang 2018

机译：退火对氦氢顺序注入钒合金组织和硬化的影响
7. On the origins of structural defects in BF 2+-implanted and rapid-thermally-annealed silicon: Conditions for defect-free regrowth [O] . T. Sands, J. Washburn, E. Myers, 1985

机译：关于BF 2 + -implanted和快速热退火的结构缺陷的起源：无缺陷再生的条件
8. Origins of Structural Defects in BF sub 2+ -Implanted and Rapid-Thermally-Annealed Silicon: Conditions for Defect-Free Regrowth [R] . Sands, T., Washburn, J., Myers, E., 1984

机译：BF sub 2+ - 嵌入和快速热退火硅结构缺陷的起源：无缺陷再生的条件

Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing

著录项

引文网络

相似文献

相关主题

期刊订阅