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Temperature effects on the electrical properties and structure of interfacial and bulk defects in Al/SiNx : H/Si devices

机译:温度对Al / SiNx:H / Si器件的电性能和界面缺陷及体缺陷结构的影响

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摘要

Bulk properties of SiNx:H thin film dielectrics and interface characteristics of SiNx:H/Si devices are studied by a combination of electrical measurements (capacitance-voltage and current-voltage characteristics) and defect spectroscopy (electron spin resonance). The SiNx:H films were deposited by an electron cyclotron resonance plasma method and subjected to rapid thermal annealing postdeposition treatments at temperatures between 300 and 1050 degreesC for 30 s. It is found that the response of the dielectric to the thermal treatments is strongly affected by its nitrogen to silicon ratio (N/Si=x) being above or below the percolation threshold of the Si-Si bonds in the SiNx:H lattice, and by the amount and distribution of the hydrogen content. The density of Si dangling bond defects decreases at moderate annealing temperatures (below 600 degreesC) in one order of magnitude for the compositions above the percolation threshold (nitrogen rich, x=1.55, and near stoichiometric, x=1.43). For the nitrogen rich films, a good correlation exists between the Si dangling bond density and the interface trap density, obtained from the capacitance measurements. This suggests that the observed behavior is mainly determined by the removal of states from the band tails associated to Si-Si weak bonds, because of the thermal relaxation of the bonding strain. At higher annealing temperatures the deterioration of the electrical properties and the increase of the Si dangling bonds seem to be associated with a release of trapped hydrogen from microvoids of the structure. For the silicon rich samples rigidity percolates in the network resulting in a rigid and strained structure for which the degradation phenomena starts at lower temperatures than for the other two types of samples.
机译:通过电学测量(电容-电压和电流-电压特性)和缺陷光谱(电子自旋共振)的组合,研究了SiNx:H薄膜电介质的体积特性和SiNx:H / Si器件的界面特性。通过电子回旋共振等离子体方法沉积SiNx:H膜,并在300至1050℃之间的温度下进行快速热退火后沉积处理30秒。发现电介质对热处理的响应受到其氮硅比(N / Si = x)高于或低于SiNx:H晶格中Si-Si键的渗透阈值的强烈影响,并且通过氢含量的数量和分布。对于高于渗滤阈值(富氮,x = 1.55,并且接近化学计量,x = 1.43)的组合物,在适度的退火温度(低于600℃)下,Si悬空键缺陷的密度降低一个数量级。对于富氮薄膜,从电容测量获得的硅悬空键密度与界面陷阱密度之间存在良好的相关性。这表明,由于键合应变的热松弛,观察到的行为主要取决于从与Si-Si弱键相关的能带尾部去除状态。在较高的退火温度下,电性能的下降和Si悬空键的增加似乎与从结构的微孔中释放出的捕获氢有关。对于富含硅的样品,刚度在网络中渗透,从而导致刚性和应变的结构,与其他两种类型的样品相比,其降解现象始于较低的温度。

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