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Electrical Characterization of Low Nitrogen Content Plasma Deposited and Rapid Thermal Annealed Al/SiNx:H/InP Metal-Insulator-Semiconductor Structures

机译：低氮含量等离子体沉积和快速热退火的电气表征Al / Sinx：H / InP金属 - 绝缘体 - 半导体结构

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Helena Castán; Salvador Dueñas; Juan Barbolla; Estefanía Redondo; Ignacio Mártil; Germán González-Díaz;
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1. Molecular models and activation energies for bonding rearrangement in plasma-deposited alpha-SiNx : H dielectric thin films treated by rapid thermal annealing - art. no. 245320 [J] . Martinez FL., Martil I., Gonzalez-Diaz G., Physical Review, B. Condensed Matter . 2001,第24期

机译：通过快速热退火处理的等离子沉积α-SiNx：H介电薄膜中键重排的键合重排的分子模型和活化能-艺术。没有。 245320
2. Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride Al/SiN_x:H/InP and Al/SiN_x:H/In_0.53Ga_0.47As structures by DLTS and conductance transient techniques [J] . H. Castan, S. Duenas, J. Barbolla Microelectronics & Reliability . 2000,第4a5期

机译：DLTS和电导瞬态技术研究ECR沉积和快速热退火氮化硅Al / SiN_x：H / InP和Al / SiN_x：H / In_0.53Ga_0.47As结构的界面质量
3. Effect of rapid thermal annealing on the optical and electrical properties of metamorphic high electron mobility transistor structures with composite InGaAs/InP channel [J] . Yuwei Liu, Hong Wang Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2006,第1期

机译：快速热退火对具有复合InGaAs / InP沟道的变质高电子迁移率晶体管结构的光电性能的影响
4. Photoluminescence and electrical properties of InGaAs/InP composite channel metamorphic HEMT structures subjected to rapid thermal annealing [C] . Yuwei Liu, Hong Wang, Yongzhong Xiong Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on . 2004

机译：快速热退火的InGaAs / InP复合沟道变质HEMT结构的光致发光和电学性质
5. Comparative electrical characteristics of rapid thermal annealed Ohmic contacts to gallium arsenide. [D] . Brooks, Michael Bernard. 1992

机译：快速热退火欧姆触点与砷化镓的比较电特性。
6. Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure [O] . Z. N. Khan, S. Ahmed, M. Ali 2011

机译：热收支对沉积HfSiO / TiN栅堆叠MOSCAP结构的原子层电学特性的影响
7. Rapid thermally annealed plasma deposited SiNx : H thin films: Application to metal-insulator-semiconductor structures with Si, In0.53Ga0.47As, and InP [O] . Mártil de la Plaza Ignacio, González Díaz Germán, Prado Millán Álvaro del, 2003

机译：快速热退火等离子体沉积的SiNx：H薄膜：应用于具有Si，In0.53Ga0.47As和InP的金属绝缘体半导体结构
8. Optical and Electrical Characterization of Pseudomorphic AlGaAs/InGaAs/GaAs Modulation-Doped Structures Processed by Rapid Thermal Annealing [R] . Dodabalapur, A., Kesan, V. P., Block, T. R., 1989

机译：快速热退火处理的假晶alGaas / InGaas / Gaas调制掺杂结构的光学和电学表征

Electrical Characterization of Low Nitrogen Content Plasma Deposited and Rapid Thermal Annealed Al/SiNx:H/InP Metal-Insulator-Semiconductor Structures

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