Photoluminescence and electrical properties of InGaAs/InP composite channel metamorphic HEMT structures subjected to rapid thermal annealing

摘要

The optical and electrical stabilities of MHEMT with an InGaAs/InP composite channel subjected RTA in the temperature range of 350 to 650 /spl deg/C were studied. Although a metamorphic strain-relief buffer is included in MHEMT structure, no evidence of enhanced detriment of PL and electrical properties after RTA was observed. In fact, for the given structures, less degradations in the MHEMT were observed as compared to the referenced LHEMTs, which may partially ease the concerns on the thermal stability of the MHEMT structures.