Method of making N-channel and P-channel devices using two tube anneals and two rapid thermal anneals

摘要

A method of making N-channel and P-channel IGFETs is disclosed. The method includes, in sequence, the steps of partially doping a first source and a first drain in a first active region of a semiconductor substrate, applying a first tube anneal while a second active region of the semiconductor substrate is devoid of source/drain doping, partially doping a second source and a second drain in the second active region, applying a second tube anneal, fully doping the first source and the first drain, applying a first rapid thermal anneal, fully doping the second source and the second drain, and applying a second rapid thermal anneal. Advantageously, the first and second tube anneals provide control over the channel junction locations, and the first and second rapid thermal anneals provide rapid drive-in for subsequent source/drain doping spaced from the channel junctions.