Power efficiency of semiconductor injection lasers

摘要

Analysis of a model of semiconductor injection lasers was carried out in terms of the basic parameters relevant to efficient device operations (i.e., device length, mirror reflectivity, absorption coefficient and material conductivity). The efficiency is improved as the optical absorption coefficient and the resistivity of the laser material are reduced. The maximum output intensity or the maximum photon density of the laser are specified; these parameters are constrained by reliability considerations. When all these are determined, there will exist a unique value of laser length and laser reflectivity which will optimize the laser efficiency for each application. It is important to note that all the device parameters must be adequately designed in order to optimize its overall power efficiency.