首页> 外国专利> High-powered semiconductor laser array apparatus in which the wavelength and phase of laser beams from semiconductor laser units above can be matched those of laser beams from semiconductor laser units below, manufacturing method of the semiconductor laser array apparatus and multi-wavelength laser emitting apparatus using the semiconductor laser array apparatuses

High-powered semiconductor laser array apparatus in which the wavelength and phase of laser beams from semiconductor laser units above can be matched those of laser beams from semiconductor laser units below, manufacturing method of the semiconductor laser array apparatus and multi-wavelength laser emitting apparatus using the semiconductor laser array apparatuses

机译:可以使来自上方的半导体激光器单元的激光束的波长和相位与来自下方的半导体激光器单元的激光束的波长和相位相匹配的大功率半导体激光器阵列装置,该半导体激光器阵列装置的制造方法以及使用该装置的多波长激光发射装置半导体激光器阵列装置

摘要

A semiconductor laser array apparatus, comprising: a first laser array structure which includes a plurality of first laser oscillation units arranged side by side at an interval, and a first current blocking material filling a space between each pair of adjacent laser oscillation units and, a second laser array structure which includes a plurality of second laser array structure arranged side by side at an interval and a second current blocking material filling a space between each pair of adjacent second laser oscillation units. Here, laser beams from the activated first and second laser array structures leak to the outside of those laser array structure so as to form first and second distribution regions of the laser beams respectively, and the first and second laser array structures are close to each other so that the first and second distribution regions contact or overlap with each other.
机译:一种半导体激光器阵列装置,包括:第一激光器阵列结构,其包括以一定间隔并排布置的多个第一激光器振荡单元;以及第一电流阻挡材料,其填充每对相邻的激光器振荡单元之间的空间;以及第二激光器阵列结构,其包括以一定间隔并排布置的多个第二激光器阵列结构以及填充在每对相邻的第二激光器振荡单元之间的空间的第二电流阻挡材料。在此,来自被激活的第一和第二激光阵列结构的激光束泄漏到那些激光阵列结构的外部,从而分别形成激光束的第一和第二分布区域,并且第一和第二激光阵列结构彼此靠近。因此,第一和第二分布区域彼此接触或重叠。

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