Infrared Semiconductor 3-5 Micrometers High Power InAsSb Based Injection Lasers

摘要

The objective of this work is to develop high power, high temperature semiconductor injection mid-infrared lasers through the growth and characterization of Sb-based strained layer superlattice (SLS) laser structures at 4 microns operating in continuous wave mode at room temperature. Our approach is to use lasers employing strained layer superlattice active regions made from InAs/InAsSb, InAsSb/InAsSb and InAsP/InAsSb alloys. Single step MOCVD growth has been used for the growth of the lasers. The quality of the InAsSbP based materials has been appraised by structural, optical and electrical characterization techniques. Lasers structures based on the InAsSbP material system have been grown, fabricated and tested. Lasers fabricated with the InAsP/ InAsSb superlattice alloy produced laser oscillation at (question mark)=4.0 microns with output powers as high as 546 mW and 94 mW in pulsed and cw modes respectively. The InAs/InAsSb superlattice alloy also has been used for the active region of lasers with (question mark) = 3.8-4.0. At low temperature, these lasers emit with very high power: up to 1.0 W with (question mark) 3.8 microns and 842 mW with (question mark) = 4.0 microns. Finally, InAsSb/InAsSb superlattice lasers have also been employed and have demonstrated a wide range of emission flexibility. Laser oscillation between 4.2 and 4.8 microns have been measured with powers as high as 460 mW.