Thermal Annealing Studies of Fe and Ti Implanted in GaAs and InP

摘要

Fe and Ti as a deep transition metal was implanted with energies of 400 keV and150 keV and with doses of 1 x 10(exp 14)/sq cm and 4 x 10(exp 14)/sq cm respectively. The optical (photoluminescence) and electrical (capacitance voltage) properties were systematically investigated after various annealing conditions. The redistribution of Fe and Ti was investigated by Secondary Ion Mass Spectrometer (SIMS). Results are given.