MANUFACTURING METHOD OF GaAs MESFET BY ISOTHERMAL TWO STAGE ANNEALING

摘要

The method minimizes an evaporation surface damage when a heat resisting gate is evapored, and increases an activation rate. The method comprises the steps: forming an ion diffusion layer (3) by diffusing impurities on the GaAs substrate (1); vaporizing the heat resisting gate metal (4) after removing photo-resistor (2); forming gates by under cutting the gate metal (4); forming and activating n+ ion diffusion layer (6); evaporizing SiO2 layer (8) after forming the source and drain resistive contact; and making pads with using an aluminum layer.