首页> 美国政府科技报告 >Determining the Mechanism of Low Temperature Graphene Growth
【24h】

Determining the Mechanism of Low Temperature Graphene Growth

机译:确定低温石墨烯生长机理

获取原文

摘要

A single layer graphene electrode has been successfully grown by the chemical vapour deposition (CVD) method using a liquid chlorobenzene carbon source trapped in a PMMA polymer matrix at a growth temperature of 450 deg C. Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and Ultraviolet-Visible (UV-vis) absorption spectroscopy have been used to identify the graphene based composition. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) have been used to characterize the film quality and growth dynamics. SEM snapshots show a preferential edge growth mechanism of single layer graphene has been observed as a function of growth time with distinct domains where only the edges parallel to the growth front are active to accept incoming carbon source. This work paves a potential pathway for an easier and cheaper production of large area conductive and transparent electrodes.

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号