MANUFACTURING METHOD OF LOW-TEMPERATURE SUBSTRATE GRAPHENE GROWTH AND LOW-TEMPERATURE SUBSTRATE GRAPHENE GROWTH AND MANUFACTURING DEVICE

摘要

Provided is a manufacturing method of low-temperature substrate grown graphene. More specifically, provided is a manufacturing method of low-temperature substrate grown graphene, comprising the following steps: (a) preparing a metal layer on a substrate; (b) supplying carbon-containing gas and etching gas and conducting inductively coupled plasma-chemical vapor deposition (ICP-CVD); (c) supplying etching gas in metal when supplying the carbon-containing gas so as to grow graphene on the metal layer; and (d) growing graphene on the substrate without the metal layer by continuously removing all the metals in the metal layer by the etching gas while continuously conducting ICP-CVD in the process of the step (c).