Manufacturing method of low-temperature substrate graphene growth without using metal catalyst and low-temperature substrate graphene growth without using metal catalyst and manufacturing device

摘要

This is designed, a. Since that includes a substrate, b. At a temperature below 500 carbon-containing gas, and supplies the inductively coupled plasma chemical vapor deposition; but do the (Inductively Coupled Plasma-- Chemical Vapor Deposition ICP CVD), c. Hydrocarbon radical (hydrocarbon radicals) of the suction (adsorb), spread (diffuse) and the substrate surface onto the nuclei occurs in that the van der Waals type of hetero-epitaxial growth (heteroepitaxial growth) type, the catalyst layer for having not that state to the Yeah, that will grow the pins on the substrate; The absence of a catalyst, a low temperature growth substrate, characterized Yes provides a method for producing a pin. In addition, the subject innovation is, a. Since that includes a substrate, b. At a temperature below 500 carbon-containing gas, and supplies the inductively coupled plasma chemical vapor deposition; but do the (Inductively Coupled Plasma-- Chemical Vapor Deposition ICP CVD), c. Hydrocarbon radical (hydrocarbon radicals) of the suction (adsorb), spread (diffuse) and the substrate surface onto the nuclei occurs in that the van der Waals type of growth type, the catalyst layer for having not that state to the on-substrate for graphene growth which will be; The absence of a catalyst, a low temperature growth substrate, characterized Yes provides a method for producing a pin. In addition, the present design is Non-catalytic substrate by a low temperature growth of graphene, The absence of a catalyst, a low temperature growth substrate Graphene, direct contact to a surface of the substrate, The absence of a catalyst, the crystal grains in the direction of the low-temperature substrate growth yes first parallel to the surface of the pin diameter, the absence of a catalyst, a low temperature substrate growth yes larger than the crystal grain diameter in the other one of the direction parallel to the surface of the pin , Crystal grain diameter in the direction of the low temperature non-catalytic substrate pin of the first growth yes, the yes that is greater than the crystal grain diameter in the direction perpendicular to the surface of the pins; The absence of a catalyst to provide a low-temperature growth of graphene substrate as claimed. In addition, the present design is Non-catalytic substrate by a low temperature growth of graphene, The absence of a catalyst, a low temperature growth substrate Graphene, direct contact to a surface of the substrate, The absence of a catalyst, a low temperature growth substrate Graphene, has a crystal grain boundary in accordance with the direction of the first parallel to the surface, The absence of a catalyst, a low temperature growth substrate Graphene, has a crystal grain boundary in accordance with the direction of the second parallel to the surface, The absence of a catalyst, a low temperature growth of graphene substrate is the single crystal in the inside of the region surrounded by the grain boundaries; The absence of a catalyst to provide a low-temperature growth of graphene substrate as claimed. In addition, the present design is Non-catalytic substrate by a low temperature growth of graphene, The absence of a catalyst, a low temperature growth substrate Graphene, direct contact to a surface of the substrate, The absence of a catalyst, a low temperature growth substrate Graphene, having a plurality of grain boundaries in accordance with a first direction parallel to said surface, The absence of a catalyst, a low temperature growth substrate Graphene, having a plurality of grain boundaries in accordance with the direction of the second parallel to the surface, The absence of a catalyst, a low temperature growth of graphene substrate is the single crystal in the inside each of the regions surrounded by the grain boundaries; The absence of a catalyst to provide a low-temperature growth of graphene substrate as claimed. In addition, the present design is Carbon-containing gas supply for supplying gas; The carbon from the gas supply, gas supply, including receiving spout gushing gas; A substrate having a substrate layer disposed in contact with the contained gas, carbon gas injected from the spout; And A heating device arranged to heat the gas containing region of the substrate and having a contact with the substrate layer, wherein the ejected carbon; And Inductively coupled plasma (Inductively Coupled Plasma) forming device for forming a plasma by inductive magnetic field is formed by applying a high-frequency power; The Non-catalytic low temperature substrate comprises growing Yes provides a production device pin. ;