首页> 外国专利> MANUFACTURING METHOD OF SUBSTRATE GRAPHENE GROWTH WITHOUT USING METAL CATALYST AND SUBSTRATE GRAPHENE GROWTH WITHOUT USING METAL CATALYST AND MANUFACTURING DEVICE

MANUFACTURING METHOD OF SUBSTRATE GRAPHENE GROWTH WITHOUT USING METAL CATALYST AND SUBSTRATE GRAPHENE GROWTH WITHOUT USING METAL CATALYST AND MANUFACTURING DEVICE

机译:不使用金属催化剂的基质石墨烯生长的制造方法和不使用金属催化剂的基质石墨烯生长的制造装置

摘要

A kind of manufacturing method is provided, graphene is grown on the substrate of no catalyst, the method for growth graphene and a kind of device making method in no catalyst substrate. The following steps of graphene are grown on the substrate of manufacturing method no catalyst of the invention:. Substrate is set; b. Supply carbonaceous gas and the chemical vapor deposition (ECR-CVD) for carrying out electron cyclotron resonance plasma enhancing; And c. Graphene is grown in substrate, passes through van der Waals type heteroepitaxial growths without catalyst layer. ;The 2016 of copyright KIPO submissions
机译:提供了一种制造方法,在无催化剂的衬底上生长石墨烯,用于生长石墨烯的方法和在无催化剂的衬底上生长器件的方法。在没有本发明催化剂的制造方法的基材上生长石墨烯的以下步骤:基板已放置; b。供应含碳气体和化学气相沉积(ECR-CVD),以进行电子回旋共振等离子体增强;和c。石墨烯在基质中生长,通过范德华型异质外延生长而没有催化剂层。 ; 2016年版权KIPO提交文件

著录项

  • 公开/公告号KR20160098936A

    专利类型

  • 公开/公告日2016-08-19

    原文格式PDF

  • 申请/专利权人 LEE YOUN TEK;

    申请/专利号KR20150021223

  • 发明设计人 LEE YOUN TEK;

    申请日2015-02-11

  • 分类号C01B31/04;

  • 国家 KR

  • 入库时间 2022-08-21 14:13:43

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