Magnetic Resonance Studies of Defects in GaN With Reduced Dislocation Densities; Journal article

摘要

Magnetic resonance experiments, including optically detected magnetic resonance (ODMR) and electron paramagnetic resonance (EPR), have been performed on Si-doped homoepitaxial GaN layers grown by MOCVD and on high quality, free-standing (approximately 200 micrometers-thick) GaN grown by HVPE. This allowed us to obtain information on the properties of native defects and dopants in GaN with a significantly reduced density of dislocations.