Optically Detected Magnetic Resonance Study of Defects in Undoped, Be-doped, and Mg-doped GaN

摘要

Undoped, Be-doped, and Mg-doped GaN samples were investigated with photo-luminescence-detected electron paramagnetic resonance (PL-EPR) and electron-nuclear double resonance (PL-ENDOR). Two types of shallow donors and a deep level Be-related complex were measured in Be-doped GaN. One type of shallow donors is probably due to Si contamination. In all investigated samples, distant gallium ENDOR lines were observed which were split by a quadrupole interaction. From this splitting the electrical field gradients (efg's) at the Ga nuclei in all investigated samples could be determined very precisely. The efg's were correlated with strain.