首页>
外国专利>
DETECTION METHOD OF DISLOCATION, MEASURING METHOD OF NUMBER OF DISLOCATION, MEASURING METHOD OF DISLOCATION DENSITY, AND CALCULATION METHOD OF GAN CRYSTAL SUBSTRATE AND DISLOCATION DENSITY
DETECTION METHOD OF DISLOCATION, MEASURING METHOD OF NUMBER OF DISLOCATION, MEASURING METHOD OF DISLOCATION DENSITY, AND CALCULATION METHOD OF GAN CRYSTAL SUBSTRATE AND DISLOCATION DENSITY
PROBLEM TO BE SOLVED: To provide a detection method capable of measuring accurate dislocation density even if the off angle to the (0001) face at the top-surface of a GaN crystal substrate is larger than 0.5°, a measuring method of the number of dislocation and dislocation density using the detection method, and a calculation method of the GaN crystal substrate of which dislocation density is measured by the measuring method of dislocation density and dislocation density.;SOLUTION: This detection method of dislocation contains a process in which the off angle to the (0001) face at the top-surface of a GaN crystal substrate is reduced to not greater than 0.5° and a process in which the top-surface of the GaN crystal substrate is etched by an etching liquid. This measuring method of the number of dislocation and dislocation density uses the detection method, and a calculation method of the GaN crystal substrate of which dislocation density is measured by the measuring method of dislocation density and dislocation density is also provided.;COPYRIGHT: (C)2008,JPO&INPIT
展开▼