Optoelectronics Devices Based on Novel Semiconductor Structures.

摘要

We have observed quasi-phase-matched second-harmonic generation in the reflection geometry from GaAs/AIAs multilayers. By using GaAs/AIGaAs multilayers as a cavity, we have also achieved cavity-enhanced nonphase-matched second-harmonic generation from GaAs/AIAs multilayers. The linewidth for the first-order reflection-second-harmonic generation is limited only by-wave-vector mismatch. In addition, we have demonstrated two-order-of-magnitude enhancement on the conversion efficiency by using the cavity. Second, we have investigated effects of two-photon absorption on optical parametric oscillation. Third, we have measured spectra of two-photon absorption coefficient for CdSe and GaSe based on z-scan technique. Fourth, we have explored possibility of efficiently generating narrow-linewidth incoherent THz waves in multilayers based on transition radiation. Fifth, we have also proposed ultimate mechanism for Raman scattering of laser beam by single cyclotron electron in vacuum or cyclotron electrons in semiconductors. Sixth, we have grown and studied InP/InAs/InP quantum wires and GaAs/AIAs type-I and type-II superlattices. These structures can be eventually used for efficient infrared detection, Qswitched emitters, and optical communications. Finally, we have also achieved coherent blue light using cascaded quasi-phase-matched SHG and phase-matched SFG in partly- periodicallypoled KTP crystals with highest conversion efficiency of 3% (output power of 14 mW).