首页> 外文期刊>Journal of Molecular Structure >Doping of molecular materials based on ferrocene and the study of their properties as organic semiconductors for their application in optoelectronic devices
【24h】

Doping of molecular materials based on ferrocene and the study of their properties as organic semiconductors for their application in optoelectronic devices

机译:基于二茂茂的分子材料掺杂及其性质作为有机半导体的研究,用于它们在光电器件中的应用

获取原文
获取原文并翻译 | 示例
       

摘要

The present study refers to the chemical doping of ferrocene materials from the reaction with 2,6-Dihydroxyanthraquinone and 2,6-Diaminoanthraquinone. Thin films of the doped molecular materials were prepared by vacuum evaporation and the morphology and structure of films were studied using SEM, EDS and IR spectroscopy. Theoretical calculations were carried out by means Gaussian 16 software and all the involved species were geometrically optimized. The IR spectrum, the HOMO-LUMO energy and the bandgaps from these calculations were achieved. The theoretical and experimental IR spectra were compared in order to verify the presence of the main functional groups of the molecular materials. The theoretical bandgap of each film was also compared with that obtained by UV-vis spectroscopy, showing similar results in the range of 2-2.9 eV. These bandgap values place the synthesized materials within the so-called organic semiconductors. Additionally from the calculations of HOMO-LUMO and bandgap results, it has been suggested that the synthesized materials can be used as a semiconductor p-type. The films were evaluated in their p-type semiconductor behavior by means of unipolar devices. In the material synthesized from ferrocene and 2,6-Dihydroxyanthraquinone a virtually ohmic I-V ratio was obtained, while the compound constituted by 2,6-Diaminoanthraquinone behaved as an insulator. In order to improve the p-type behavior of the synthesized semiconductors, unipolar devices were given a hole-injecting layer between the anode and the synthesized materials: glass/ITO/CuPc/synthesized material/Ag. Its I-V electrical behavior was evaluated by the effect of influencing electromagnetic radiation in the range of the electromagnetic spectrum between the IR and the UV passing through the visible spectrum. The results for both devices have shown that the one manufactured from ferrocene and 2,6-Dihydroxyanthraquinone exhibited a behavior similar to that of a Schottky diode, while the one
机译:本研究是指与2,6-二羟基醌和2,6-二氨基醌的反应中的二茂铁材料的化学掺杂。通过真空蒸发制备掺杂分子材料的薄膜,使用SEM,EDS和IR光谱研究薄膜的形态和结构。通过意味着高斯16软件进行理论计算,并且所有所涉及的物种都是几何优化的。实现了IR光谱,同性恋能量和来自这些计算的带隙。比较理论和实验IR光谱以验证分子材料的主要官能团的存在。将每种膜的理论带隙与通过UV-Vis光谱法获得的相比,显示出类似的结果在2-2.9eV的范围内。这些带隙值将合成的材料放置在所谓的有机半导体内。另外,从HOMO-LUMO和带隙结果的计算中,已经提出了合成材料可以用作半导体P型。通过单极器件在其P型半导体行为中评估薄膜。在由二茂铁和2,6-二羟基醌合成的材料中获得几乎欧姆的I-V比,而在2,6-二氨基醌构成的化合物表现为绝缘体。为了改善合成半导体的p型行为,在阳极和合成材料之间给出单极器件:玻璃/ ITO / CUPC /合成材料/ AG。通过影响IR和UV之间的电磁谱的范围内的电磁辐射来评估其I-V电动特性。两种器件的结果表明,由二茂铁和2,6-二羟基醌制造的,表现出类似于肖特基二极管的行为,而其中

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号