Optoelectronic devices based on InSb and InAs MIS structures. perculiarities of construction, parameters and application

摘要

Results of experimental investigations for different line and matrix hybrid modules and IR systems (matrix thermographer - temperature resolution 4-8 mK, IR microscope - spatial resolution 3-4 mum, rapid spectrographer ~10⁴ spectra per sec.) based on InAs CCI radiation detectors are laid down in the present contribution.