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Time Resolved Spectroscopy in InAs and InSb based Narrow-Gap Semiconductors

机译：时间解析的in is和基于内部窄间隙半导体的光谱

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作者
Bhowmick, Mithun.;
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作者单位

Virginia Polytechnic Institute and State University.;

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授予单位 Virginia Polytechnic Institute and State University.;
学科
学位 Ph.D.
年度 2012
页码 126 p.
总页数 126
原文格式 PDF
正文语种 eng
中图分类 AAI10593044;
关键词
Ferromagnetic semiconductor; Inmnas; Inmnsb; Insb quantum wells; Spin relaxation; Time resolved spectroscopy;

机译：铁磁半导体;inmnas;inmnsb;INSB量子阱;旋弛放松;时间解决的光谱学;

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专利

1. Evidence for Itinerant Carriers in an Anisotropic Narrow-Gap Semiconductor by Angle-Resolved Photoemission Spectroscopy [J] . Ju Sailong, Bai Wei, Wu Liming, Advanced Materials . 2018,第2期

机译：角度分辨光发射光谱法在各向异性窄间隙半导体中流动载流子的证据
2. ELECTRONIC STRUCTURE OF INAS((1)OVER-BAR-(1)OVER-BAR-(1)OVER-BAR)2X2 AND INSB((1)OVER-BAR-(1)OVER-BAR-(1)OVER-BAR)2X2 STUDIED BY ANGLE-RESOLVED PHOTOELECTRON SPECTROSCOPY [J] . Andersson CBM., Hakansson MC., Olsson LO., Physical Review, B. Condensed Matter . 1996,第3期

机译：INAS（1）-（-）-（1）-BAR-（1）-BAR）的电子结构2X2和INSB（（1）-BAR-（1）-BAR-（1）-BAR角分辨光电子能谱研究的）2X2
3. Concept of the Time-Dependent Diffusion Coefficient of Polarons in Organic Semiconductors and Its Determination from Time-Resolved Spectroscopy [J] . Rais David, Mensik Miroslav, Paruzel Bartosz, The journal of physical chemistry, C. Nanomaterials and interfaces . 2018,第40期

机译：有机半导体中的极精子的时间依赖性扩散系数的概念及其从时间分辨光谱的测定
4. Time Resolved Studies of Magnetic and Non-magnetic Narrow-gap Semiconductors [C] . G. A. Khodaparast, K. Nontapot, A. Gifford, International Conference on Narrow-Gap Semiconductors and Related Materials . 2006

机译：磁性和非磁性窄间隙半导体的时间分辨研究
5. Time and frequency resolved pump probe spectroscopy and growth of near surface quantum confined semiconductors coupled to metallic nanostructures. [D] . Olitzky, Joshua D. 2016

机译：时间和频率分辨泵浦光谱学以及与金属纳米结构耦合的近表面量子受限半导体的生长。
6. Structure–Function Relationship of Organic Semiconductors: Detailed Insights From Time-Resolved EPR Spectroscopy [O] . Till Biskup 1970

机译：有机半导体的结构-功能关系：时间分辨EPR光谱的详细见解
7. Time-Resolved Observation of Photo-Generated Carrier Transport Dynamics on Semiconductor Surface Based on Femtosecond Core-Level Photoelectron Spectroscopy [O] . Katsuya OGURI, Takanobu TSUNOI, Keiko KATO, 2015

机译：基于飞秒芯级光电子谱的半导体表面光产生载波动力学的时间分辨观察
8. Time-Resolved Photoluminescence of InAs/GaInSb Quantum Well Lasers [R] . McKay, M. R. 2000

机译：Inas / GaInsb量子阱激光器的时间分辨光致发光

Time Resolved Spectroscopy in InAs and InSb based Narrow-Gap Semiconductors

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