ELECTRONIC STRUCTURE OF INAS((1)OVER-BAR-(1)OVER-BAR-(1)OVER-BAR)2X2 AND INSB((1)OVER-BAR-(1)OVER-BAR-(1)OVER-BAR)2X2 STUDIED BY ANGLE-RESOLVED PHOTOELECTRON SPECTROSCOPY

摘要

The electronic structure of molecular-beam-epitaxy-grown InAs((111) over bar)2x2 and InSb((111) over bar)2x2 surfaces is investigated by angle-resolved photoelectron spectroscopy. Valence band spectra, and dispersions of five surface-related structures, are presented. The qualitative similarities of data from the two surfaces indicate that they are very similar, with respect to atomic and electronic structure. Comparisons with other (111) surfaces support the identification of the surface-related structures. [References: 35]