AlGaN/InGaN Nitride Based Modulation Doped Field Effect Transistor

摘要

The goal of the proposed work is to investigate the potential advantages of the InGaN channel as a host of the 2DEG and to address the material related problems facing this ternary alloy in the AlGaN/InGaN MODFET structure. The impact on addressing these materials issues on the AlGaN/InGaN MODFET device performance will be systematically investigated and compared with the corresponding GaN 2DEG. There are several issues that were investigated, that are related to the properties of InGaN and AlGaInN material systems. These properties are concerned with the strain and its effects on the band structure, recombination process, band offset and piezoelectric fields and 2DEG.