ENHANCEMENT-MODE FIELD-EFFECT TRANSISTOR COMPRISING AN ALGAN/GAN HETEROJUNCTION AND A P-DOPED DIAMOND GATE

摘要

The invention relates to an enhancement-mode field-effect transistor (100) comprising at least: a heterojunction formed by at least one first layer (104) comprising GaN and at least one second layer (106) comprising AlGaN; and a gate (116) comprising P-doped diamond, such that a first part (115) of the second layer of the heterojunction defining a channel of the transistor is arranged between the gate and the first layer of the heterojunction; and in which the first part of the second layer of the heterojunction has a thickness of between approximately 5 nm and 12 nm and an aluminium content of between approximately 15% and 20%.