NITRIDE SEMICONDUCTOR EPITAXIAL WAFER FOR FIELD EFFECT TRANSISTOR, NITRIDE SEMICONDUCTOR-BASED FIELD EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR EPITAXIAL WAFER FOR FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor epitaxial wafer that can relieve a trapping phenomenon of electrons and can suppress generation of a hexagonal defect.;SOLUTION: In the method of manufacturing a nitride semiconductor epitaxial wafer 10 including forming a kernel generation layer 2 on a substrate 1, forming a first nitride semiconductor layer 3 on the kernel generation layer 2, and forming a second nitride semiconductor layer 4 having smaller electron affinity than the first nitride semiconductor layer 3 on the first nitride semiconductor layer 3, growth temperature when the first nitride semiconductor layer 3 is formed is made lower than that when the second nitride semiconductor layer 4 is formed.;COPYRIGHT: (C)2013,JPO&INPIT