Transistor nitride semiconductor epitaxial wafer and a nitride semiconductor field effect transistor

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor field effect transistor in which an Ids value in an idling state before and after high-output driving is stabilized and variations in the gain are suppressed, and a nitride semiconductor epitaxial wafer for a transistor, which constitutes the above nitride semiconductor field effect transistor.;SOLUTION: The nitride semiconductor epitaxial wafer for a transistor is obtained by epitaxially growing a nitride semiconductor layer 102 and a GaN layer 103 as an electron transit layer in this order on a SiC substrate 101. While an electron supply layer is not formed on the GaN layer 103, the GaN layer 103 shows a photo-response characteristic of 0.1 or more. The photo-response characteristic is represented by a ratio of a lateral current value under the condition of light irradiation (1.98 eV) relative to a lateral current value without light irradiation, when the environment for measuring a lateral current value of the GaN layer 103 is switched from the no irradiation condition to the condition of light irradiation at a photon energy of 1.98 eV.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2016,JPO&INPIT