Semiconductor Quantum Dot Structures for Integrated Optic Switches

摘要

Quantum dot structures have been produced by etching pillars in GaAs/AlGaAs multiple quantum well structures. The pillars as tall as 1 m and with diameter as small as 40nm were defined using direct write electron beam lithography in combination with inductively coupled plasma reactive ion etching. Waveguide structures containing quantum dot regions integrated with disordered MQW sections have been fabricated. These integrated waveguides have been tested in our laboratory and have shown evidence of good waveguiding characteristics. We are currently assessing their electro-optic and nonlinear properties.