PROBLEM TO BE SOLVED: To provide a method of manufacturing a quantum dot carrying porous n-type semiconductor in which a quantum dot being a semiconductor nano particle is carried on a porous n-type semiconductor, capable of efficiently controlling a quantum dot containing 16-th group element for carrying, and to provide a quantum dot carrying porous n-type semiconductor obtained by the manufacturing method, an electrode for a quantum dot dye-sensitized solar cell, and a quantum dot dye-sensitized solar cell.SOLUTION: The method of manufacturing a quantum dot carrying porous n-type semiconductor in which a quantum dot being a semiconductor nano particle is carried on a porous n-type semiconductor includes a step in which a porous n-type semiconductor is radiated with light under such condition as it is submerged in a 16-th group element compound contained solution, and then a step in which a 16-th group element carrying porous n-type semiconductor obtained through the aforementioned step is radiated with light under such condition as it is submerged in a metal ion contained solution.
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