Theory and Operation of Cold Field-effect Transistor (FET) External Parasitic Parameter Extraction

摘要

The design of monolithic microwave integrated circuits (MMIC) is dependent on the ability to generate accurate device models. Prior knowledge of the external parasitic components is required to determine the small-signal model of the intrinsic device. In this report, we describe a technique and its implementation for extracting external device parasitics. The term cold field- effect transistor (FET) refers to measurements taken when the drain is at the same voltage as the source.