An Analytical Method for Parameter Extraction in Oxide Semiconductor Field-Effect Transistors

摘要

This article presents an analytical method for parameter extraction in oxide semiconductor field-effect transistors (OS FETs), including threshold voltage (V-T), effective channel length (L-eff), source-drain series resistance (R-SD), and intrinsic effective mobility (mu(int)). An analytical expression of effective mobility (mu(eff)) is implemented with the consideration of percolation conduction and R-SD effects. This method relies on the concept of Y-function method and the channel length dependent measurement. The extraction results are compared to those from the combination of transfer length method (TLM). It has been shown that a better accuracy of the extracted parameters is achieved with the proposed method. Furthermore, transfer characteristics are resimulated based on the extracted parameters, in which a good match between measurement and simulation is obtained.