Growth and Characterization of Low Density InAs/GaAs Quantum Dots (QD) for Quantum Information Processes

摘要

The aim of this project was to study the characteristics of the large QDs in a PC-based mu-cavity and finally develop the single photon source (SPS). Better understanding of large QDs without mu-cavity would lead to better understanding of the large QDs with mu-cavity. So, the PI studied the large single QD and coupled QD further on their optical properties. Design of PC- based mu-cavity should be followed for the growth and fabrication of photonic- crystal based mu-cavity with low density In(Ga)As/GaAs QDs, which can act as a single photon source. The final goal of the 3-year project is to develop the PC- based single photon source with large In(Ga)As/GaAs QDs.