Influence of the thermal treatment on the optical and structural properties of 1.3 μm emitting quantum dots (QDs) grown by LP-MOVPE grown InAs/GaAs quantum dots

摘要

The optical and structural properties of a single array of 1.3 μm emitting quantum dots (QDs) grown by LP- MOVPE are presented after different thermal treatments (between 570deg.C under arsine flux during 25 min) Simulating the overgrowth of the confinement layers for broad area lasers. The photoluminescence (PL) efficiency of the 1.3 μm line is not affected by a thermal treatment below 620deg.C. Nevertheless, a drastic decrease of the 1.3 μm peak intensity occurs for higher anneal temperature (670deg.C), together with an important blueshift of the PL spectrum (=40 meV).