Investigation of the Effect of Temperature During Off-State Degradation of AlGaN/GaN High Electron Mobility Transistors

摘要

AlGaN/GaN High Electron Mobility Transistors were found to exhibit a negative temperature dependence of the critical voltage (V(sub CRI)) for irreversible device degradation to occur during bias-stressing. At elevated temperatures, devices exhibited similar gate leakage currents before and after biasing to VCRI, independent of both stress temperature and critical voltage. Though no crack formation was observed after stress cross-sectional TEM indicates a breakdown in the oxide interfacial layer due to high reverse gate bias.