Measurements of Minority-Carrier Lifetime in an n-Type Diffused Skin

摘要

A modified photoconductivity method was used to measure the minority-carrier lifetime in an n-type, diffused skin. The measurements show the lifetime to be a function of surface conditions. The samples were exposed to gases, treated with etches, and subjected to abrasion. The effect of these treatments on the minority-carrier lifetime is compared with their effect on P-N-P germanium transistors. A short theoretical study of the measuring procedure is also included. (Author)