机译:硫化锡薄膜中少数载流子寿命的瞬态太赫兹光电导测量:早期光伏材料的先进计量
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA;
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA;
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA;
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA;
Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA;
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA;
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA;
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA,Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA,PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA;
Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA;
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA;
机译:使用光泵太赫兹探针测量在Si(100)上的GaAs薄膜的光电导性,载流子寿命和迁移率评估
机译:反应蒸发的硒化铅薄膜的结构,光学,瞬态光电导性研究和低温热电功率测量
机译:a-Se_(90-x)Sb_(10)In_x薄膜的稳态和瞬态光电导率测量
机译:掺杂CDSE薄膜的瞬态光电导测量
机译:表征和建模非晶In-Ga-Zn-O薄膜中的瞬态光电导。
机译:溶液沉积二氧化钌纳米膜中光电导率的静态和时间分辨太赫兹测量。
机译:误诊:“硫化锡薄膜少数型载体寿命的瞬态太赫兹光电导测:早期光伏材料的高级计量”J。苹果。物理。 119,035101(2016)