Transient Photoconductivity Measurements of In-doped CdSe thin films

摘要

The nanocrystalline thin films of In doped CdSe are prepared by thermal vaccum evaporation technique using Inert Gas Condensation method at room temperature. The transient photoconductivity measurements are performed at two different light intensities for nanocrystalline In doped CdSe thin fims. Photocurrent decay, even after subtraction of persistent photocurrent, is found to be non-exponential in the present case, indicating the presence of continuous distribution of defect states. Differential life time of excess carriers is also calculated which supports the above argument.