Fabrication Procedure for Silicon Membrane X-Ray Lithography Masks.

摘要

A step-by-step procedure for the fabrication of silicon membrane x-ray lithography masks is described. The procedure involves the diffusion of boron into the polished face of an n-type <100>silicon wafer,the formation of gold absorber patterns on the boron diffused face,and the selective etching of the n-type silicon so as to produce thin membranes (2to 5microns thick) of silicon supporting the absorber patterns. (Author)