Membrane made of silicon carbide and silicon nitride, a process for their preparation and mask - for the x-ray lithography using such a membrane.

摘要

PURPOSE:To produce a thin film having superior visible light transmissivity by carrying out film formation on a substrate by sputtering with a target consisting of SiC and Si3N4 in a specified molar ratio. CONSTITUTION:A target consisting of SiC and Si3N4 in (95:5)-(30:70) molar ratio is used. Electric power is supplied to the target by about =5W/cm2 under about 1X10-2-1X10-1Torr pressure and film formation is carried out on a substrate at about 100-1,000 deg.C by magnetron sputtering or other method. A thin film having 1X108-1X1010 dyne/cm2 tensile stress, high energy beam and chemical resistances is obtd. This thin film is suitable for a mask for X-ray lithography.