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Room-Temperature CW Operation of GaInAsP/InP Double-Heterostructure Diode Lasers Emitting at 1.1 Micrometers.

机译：GaInasp / Inp双异质结构二极管激光器的室温CW操作发射1.1微米。

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Room-temperature cw operation has been achieved for stripe-geometry double-heterostructure Ga(0.12)In(0.88)As(0.23)P(0.77)/InP diode lasers emitting at 1.1 micrometers. The heterostructures were grown by liquid-phase epitaxy on melt-grown InP substrates, and stripes were defined by using proton bombardment to produce high-resistance current-confining regions. (Author)

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作者
Hsieh, J. J.; Rossi, J. A.; Donnelly, J. P.;
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年度 1976
页码 1-4
总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Semiconductor lasers; Infrared lasers; Epitaxial growth; Continuous waves; Room temperature; Reprints; Gallium indium arsenide phosphide; Gallium arsenides; Indium phosphides; Liquid phase epitaxy; Semiconducting films; Proton irradiation;

机译：半导体激光器;红外激光器;外延生长;连续波;室温;重印;砷化铟铟磷化物;砷化镓;磷化铟;液相外延;半导体薄膜;质子辐照;

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专利

1. Low threshold room temperature pulsed and -57 degrees C CW operations of 1.3 mu m GaInAsP/InP circular planar buried heterostructure surface-emitting lasers [J] . Baba T., Suzuki K. IEEE Photonics Technology Letters . 1993,第7期

机译：1.3μmGaInAsP / InP圆形平面埋藏异质结构表面发射激光器的低阈值室温脉冲和-57℃CW操作
2. Room-temperature pulsed operation of a 1.5- mu m GaInAsP/InP vertical cavity surface emitting laser [J] . Tadokoro T., Okamoto H. IEEE Transactions on Electron Devices . 1992,第11期

机译：1.5微米GaInAsP / InP垂直腔表面发射激光器的室温脉冲操作
3. Room-temperature operation of GaInAsP lasers epitaxially grown on wafer-bonded InP/Si substrate [J] . Matsumoto Keiichi, Kishikawa Junya, Nishiyama Tetsuo, Applied physics express . 2016,第6期

机译：外延生长在晶片键合InP / Si衬底上的GaInAsP激光器的室温工作
4. Room-temperature cw operation of GaInSb/AlGaSb quantum well diode lasers emitting beyond 2 μm [C] . C. Mermelstein, S. Simanowski, M. Mayer, Conference on Lasers and Electro-Optics . 2000

机译：房间温度CW操作的GaITB / Algasb量子阱二极管激光器发射超过2μm
5. GaInAsP/InP Organo-Metallic Vapor Phase Epitaxy (OMVPE) for Quantum Box Lasers [D] . 宮本恭幸. 1988

机译：用于量子盒激光器的GaInAsP / InP有机金属气相外延（OMVPE）
6. Green Synthesis of InP/ZnS Core/Shell Quantum Dots for Application in Heavy-Metal-Free Light-Emitting Diodes [O] . Tsung-Rong Kuo, Shih-Ting Hung, Yen-Ting Lin, 2017

机译：InP / ZnS核/壳量子点的绿色合成用于无重金属的发光二极管
7. A GaInAsP/InP Vertical Cavity Surface Emitting Laser for 1.5m operation [O] . R. Sceats, N. Balkan, M. J. Adams, 2015

机译：用于1.5m工作的GaInasp / Inp垂直腔面发射激光器
8. Room-Temperature Operation of GaInAsP/InP Double-Heterostructure Diode Lasers Emitting at 1.1 Micrometers. [R] . Hsieh, J. J. 1975

机译：GaInasp / Inp双异质结构二极管激光器的室温操作发射1.1微米。

Room-Temperature CW Operation of GaInAsP/InP Double-Heterostructure Diode Lasers Emitting at 1.1 Micrometers.

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