Low threshold room temperature pulsed and -57 degrees C CW operations of 1.3 mu m GaInAsP/InP circular planar buried heterostructure surface-emitting lasers

摘要

Room temperature pulsed lasing operation of a 1.3- mu m GaInAsP/InP vertical-cavity surface-emitting laser has been achieved by using an effective carrier confinement of circular planar buried heterostructure (CPBH) and high reflectivity SiO/sub 2//Si dielectric multilayer mirrors. The threshold current for a device having a nearly 12- mu m-diameter active region was 34 mA at 24 degrees C under pulsed operation. The optimized window cap structure reduces the series resistance to 6 approximately 15 Omega . Continuous wave lasing was also obtained up to -57 degrees C, and the threshold below -61 degrees C was still lower than 22 mA.