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Low threshold 1.3 /spl mu/m-GaInAsP/InP tensile-strained quantum well lasers with buried heterostructure

机译：具有埋藏异质结构的低阈值1.3 / spl mu / m-GaInAsP / InP拉伸应变量子阱激光器

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Semiconductor lasers emitting at 1.3 /spl mu/m are important light sources for optical communication systems. We previously reported on 1.3 /spl mu/m GaInAsP-InP tensile-strained QW lasers emitting at 1.3 /spl mu/m with low threshold current density. In this paper, we report low threshold buried heterostructure (BH) lasers.

机译：在1.3 / SPL MU / M发射的半导体激光器是用于光通信系统的重要光源。我们之前报道了1.3 / SPL MU / M GAINAP-INP拉伸QW激光器，在1.3 / SPL MU / M以低阈值电流密度发射。在本文中，我们报告了低阈值掩埋异质结构（BH）激光器。

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《》|1995年|P.284-285|共2页
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Yokouchi; N.; Yamanaka; N.;
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中图分类无线电电子学、电信技术;
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1. Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/-InP tensile-strained quantum wells for 1.3-/spl mu/m low-threshold lasers [J] . Yokouchi N., Yamanaka N. IEEE Photonics Technology Letters . 1995,第8期

机译：Ga / sub x / In / sub 1-x / As / sub y / P / sub 1-y / -InP拉伸应变量子阱，用于1.3- / spl mu / m低阈值激光器
2. Low threshold 1.3 mu m-GaInAsP/InP tensile strained single quantum well lasers grown by low-pressure MOCVD [J] . Yokouchi N., Yamanaka N. Electronics Letters . 1995,第2期

机译：低压MOCVD生长的低阈值1.3μm-GaInAsP / InP拉伸应变单量子阱激光器
3. Threshold currents of 1.3-/spl mu/m bulk, 1.55-/spl mu/m bulk, and 1.55-/spl mu/m MQW DFB P-substrate partially inverted buried heterostructure laser diodes [J] . Kakimoto S., Watanabe H. IEEE Journal of Quantum Electronics . 1998,第3期

机译：阈值电流为1.3- / splμ/ m体积，1.55- / splμ/ m体积和1.55- / splμ/ m3 MQW DFB P衬底部分倒置的埋入式异质结构激光二极管
4. Low threshold 1.3 /spl mu/m-GaInAsP/InP tensile-strained quantum well lasers with buried heterostructure [C] . Yokouchi N., Yamanaka N., Institute of Electric and Electronic Engineer IEEE Lasers and Electro-Optics Society Annual Meeting . 1995

机译：低阈值1.3 / SPL MU / M-GAIASP / INP拉伸量子孔与埋下异质结构
5. Step-Tapered Active-Region Mid-Infrared Quantum Cascade Lasers And Novel Fabrication Processes For Buried Heterostructures [D] . Chang, Chun-Chieh 2015

机译：阶梯形有源区中红外量子级联激光器和埋入异质结构的新型制造工艺
6. Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers [O] . Xiang-Bin Su, Ying Ding, Ben Ma, 2018

机译：消除用于制备1.3μm量子点激光器的InAs / GaAs量子点中的双峰尺寸
7. High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currentsud [O] . Liu H.Y., Childs D.T., Badcock T.J., 2005

机译：高性能三层1.3- / spl mu / m Inas-Gaas量子点激光器，具有极低的连续波室温阈值电流 ud
8. Buried-Oxide Ridge-Waveguide InAlAs-InP-InGaAsP (lambda approximately 1.3micrometers) Quantum Well Heterostructure Laser Diodes [R] . Krames, M. R., Holonyak, N., Epler, J. E., 1994

机译：埋氧氧化物脊波导Inalas-Inp-InGaasp（λ约1.3微米）量子阱异质结构激光二极管

Low threshold 1.3 /spl mu/m-GaInAsP/InP tensile-strained quantum well lasers with buried heterostructure

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