Room-Temperature Operation of GaInAsP/InP Double-Heterostructure Diode Lasers Emitting at 1.1 Micrometers.

摘要

This letter reports the room-temperature operation of Ga1-xInxAs1-yPy/InP double-heterostructure (DH) diode lasers. Broad-area devices emitting at 1.1 micrometers have been fabricated from three-layer films grown by liquid-phase epitaxy (LPE) on InP substrates. Pulsed thresholds as low as 2.8 kA/sq cm have been obtained for an active region thickness of 0.6 micrometers. With threshold in this range it should be possible to produce stripe-geometry lasers capable of continuous operation at room temperature. Such cw lasers would be of particular interest for communication systems using optical fibers, which have their minimum transmission loss near 1.1 micrometers. (Author)