Uniform-Carrier-Concentration p-Type Layers in GaAs Produced by Beryllium Ion Implantation.

摘要

Multiple-energy Be(+) ion implantation has been used to create uniform-carrier-concentration p-type layers (> or approximately 1.5 micrometers thick) in GaAs. The implanted samples were annealed at 900 C using pyrolytic Si3N4 as an encapsultant. High activation of the implanted Be was observed. On samples with implanted hole concentrations of 2 to the 18th power/cu cm, the measured carrier concentration as a function of depth is in good agreement with that expected from LSS range theory. For higher doses, diffusion of the implanted Be was observed. P(+)n(-)n(+) junctions formed by implantation into undoped epitaxial material have low leakage currents and sharp breakdowns at average electric fields in the N(-) region of 150000 V/cm. (Author)