InP by Planar Reactive Deposition and GaAs by Low Pressure Metal Organic Chemical Vapor Deposition

摘要

The planar reactive deposition (PRD) technique was developed to grow InP thin films by vacuum evaporation in a H2 reactive atmosphere. InP films with room temperature mobilities as high as 4062 sq cm/Vsec and carrier concentrations (N(D)-N(A)) as low as 10 to the 16th power cu/cm were grown on (100) semi-insulating substrates. N+ films with carrier concentration of a few times 10 to the 19th power cu/cm were obtained using Sn doping. N+/N/N+ multilayer structures, and large area (10 cm) epitaxial films were grown on InP substrates. Epitaxial films of InGaAs, InGaP and InGaAsP were grown by PRD, and lattice matched to InP and GaAs substrates. As an intermediate step to grow InP by low pressure metal organic chemical vapor deposition (LPMOCVD), GaAs was grown by LPMOCVD. Unintentionally doped p-type GaAs, with hole concentration as high as a few times 10 to the 20th power cu cm, was grown at the Ga-rich three-phase boundary. By undertaking growth away from the boundary, the hole concentration decreased, and ionized impurity concentrations (N(A) + N(D)) as low as 10 to the 16th power cu cm were obtained. Major background impurities for growth of InP by PRD and GaAs by LPMOCVD are carbon and oxygen. Growth of InP in a halide environment is recommended to obtain higher purity InP thin films by low cost vacuum technologies. (Author)